馬佐平 博士

Dr. Tso-Ping Ma, Ph.D.
耶魯大學教授
美國工程院院士、中國科學院外籍院士、台灣中研院院士
中國旅美科技協會(大紐約)高級顧問

馬佐平院士是美籍華裔微納電子學家,耶魯大學教授、美國工程院院士、中國科學院外籍院士、台灣中研院院士。馬佐平院士畢業于台灣大學電機系。此後赴美國留學,先後獲耶魯大學碩士、博士學位。畢業後在IBM從事研究,1977年起任教于耶魯大學。1991年至1996年、2000年至2007年間兩度出任電機工程系主任。 他也是電氣電子工程師學會(IEEE)、美國物理學會、美國電化學學會、美國材料研究學會等學會的成員,還曾獲得過IEEE葛洛夫獎(Andrew S. Grove Award)、潘文淵傑出研究獎、康乃狄克州科技勳章(Connecticut Medal of Technology)等許多獎項。馬佐平院士也是中國科學院、清華大學、天津大學、北京大學等學校的名譽教授,

Dr. T.P. Ma's pioneering work in gate dielectrics increased integrated circuit operating speed and reliability, lowered cost per function, and raised density by a significant factor. Gate dielectrics are a critical element in metal oxide semiconductor (MOS) devices, the building blocks of today's silicon chips. Dr Ma, the Raymond John Wean Professor of Electrical Engineering and chair of the Electrical Engineering Department at Yale University in New Haven, Connecticut, recognized early the importance of gate tunneling current in MOS behavior. The semiconductor industry now recognizes this as a major issue in scaling future MOS technology.

He is co-author with Paul V. Dressendorfer of "Ionizing Radiation Effects in MOS Devices and Circuits." This has been hailed widely by colleagues as the most authoritative and comprehensive work on the subject.

A Fellow of the IEEE, Dr. Ma is a member of the U.S. National Academy of Engineering and has received the IEEE Electron Devices Society's Paul Rappaport Award.